analog research

Analog research groups university

Texas AM AMSC ; amsc.tamu.edu

Georgia Tech Analog Consortium ; ece.gatech.edu/research/GTAC/

Caltech High-Speed ICs ; chic.caltech.edu/

Berkeley Wireless Research
Center ; bwrc.eecs.berkeley.edu

Iowa State ; vlsi.ece.iastate.edu

Stanford VLSI Research Group ; mos.stanford.edu

Stanford Integrated Circuits Laboratory cis.stanford.edu

Stanford Concurrent VLSI Architecture ;cva.stanford.edu

Stanford SMIrC Laboratory; smirc.stanford.edu

Berkeley Jan M. Rabaey ;bwrc.eecs.berkeley.edu

Berkeley Wireless Research Center (http://bwrc.eecs.berkeley.edu)

Stanford Microwave Integrated Circuits Laboratory (http://www-smirc.stanford.edu)

AsadAbidi Research Group(UCLA http://www.icsl.ucla.edu)

Behzad Razavi Research Group (UCLA http://www.ee.ucla.edu/faculty/bios/razavi.htm)

Georgia Tech Analog Consortium (GTAC http://www.ece.gatech.edu/research/GTAC/)

Caltech High-speed Integrated Communications Group http://chic.caltech.edu

Texas AM University (http://amsc.tamu.edu )

UCLA Research Centers; ee.ucla.edu

UCLA Asad Abidi’s Group; icsl.ucla.edu

UCLA Razavi’s CCLab ; ee.ucla.edu/~razavi/

UC Davis Electronic Circuits Research; ece.ucdavis.edu

Columbia Integrated Systems Laboratory ; cisl.columbia.edu/

University of Toronto Electronics Group; eecg.utoronto.ca

UMN Analog Groups; ee.umn.edu

WPI Microelectronics Group ; wpi.edu

UTD James R. Hellums; utd.edu

UTD Dr. Hoi Lee ; utdallas.edu

MOSFET papers free download

BSIM3v3
Manual, (Final Version), Yuhua Cheng, Mansun Chan, Kelvin Hui, Min-chie Jeng,
Zhihong Liu, Jianhui Huang, Kai Chen, James Chen, Robert Tu, Ping K. Ko,
Chenming Hu Department of Electrical Engineering and Computer Sciences,
University of California, Berkeley, CA 94720, from
http://www-device.eecs.berkeley.edu/~bsim3/ftpv330/Mod_doc/b3v33manu.tar

MOS Scaling: Transistor
Challenges for the 21st Century, Scott Thompson, Paul Packan, Mark Bohr,
Intel Corp.

Compact
Modeling of Drain and Gate Current Noise for RF CMOS, , R. van Langevelde

Noise Modeling for RF CMOS Circuit Simulation , A.J. Scholten et
al., IEEE Trans. Electron Devices

Compact
Modeling of Drain and Gate Current Noise for RF CMOS , A.J. Scholten
et al., IEDM 2002 Technical Digest

Gate
current: Modeling, DL extraction and impact on RF performance , R. van
Langevelde et al., IEDM 2001 Technical Digest, pp. 289-292, 2001 (265kB).

RF-CMOS
performance trends , P.H. Woerlee et al., IEEE Trans. Electron Devices,
Vol. ED-48, pp. 1776-1782, 2001 (160kB).

RF-Distortion in deep sub-micron CMOS technologies , R. van
Langevelde et al., IEDM 2000 Technical Digest, pp. 807-810, 2000 (259kB).

Efficient parameter extraction techniques for a new surface-potential-based
MOS model for RF applications , W. Liang et al., Proceedings ICMTS 2001,
pp. 141-145, 2001 (327kB).

Accurate thermal noise model for deep sub-micron CMOS , A.J.
Scholten et al., IEDM 1999 Technical Digest, pp. 155-158, 1999 (264kB).

Accurate
drain conductance modeling for distortion analysis in MOSFETs , R. van
Langevelde and F.M. Klaassen, IEDM 1997 Technical Digest, pp. 313-317, 1997
(362kB).

Effect of gate-field dependent mobility degradation on distortion
analysis in MOSFET’s , R. van Langevelde and F.M. Klaassen, IEEE Trans.
Electron Devices, Vol. ED-44, pp. 2044-2052, 1997 (264kB).

90 nm Node CMOS Technology Comparison between INTEL Corporation and
SAMSUNG Electronics , Min Chin Chai, 2003, http://shay.ecn.purdue.edu/~ee612/2003fp/Chai612.pdf.

The transistor, with emphasis on its use for radio frequency
telecommunication. , Linköping Studies in Science and Technology.
Dissertation No. 508, 1998. Presented at LiTH, February 13, 1998.

MOSFET LF noise under Large Signal Excitation: Measurement, Modelling and
Application , Wel, A.P. van der, PhD thesis, University of Twente, 2005
http://purl.org/utwente/fid/2951.pdf

Advanced Model and Analysis of Series Resistance for CMOS Scaling Into
Nanometer Regime—Part II: Quantitative Analysis, Seong-Dong Kim,
Cheol-Min Park and Jason C. S. Woo, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.
49, NO. 3, MARCH 2002