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LNA Design Articles
- If you are not experienced designer start with fundamntals from this class notes
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Designing an LNA for
a CDMA front end, LNA design is critical in modern communication
systems. Understanding necessary additional design considerations can
save both time and money., Jarek Lucek and Robbin Damen, February, 1999.
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A 2GHz
Low-Distortion Low-Noise Two-Stage LNA Employing LowImpedance BiasTerminations
and Optimum Inter-Stage Match for Linearity , Shah P., Qualcomm Inc.
ESSCIRC 2000
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A 9mW, 900-MHz
CMOS LNA with 1.05dB-Noise-Figure, Gramegna G., STMicroelectronics.
ESSCIRC 2000.
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A Universal
Dual Band LNA Implementation in SiGe-Technology for Wireless Applications,
Schmidt A., Infineon Technologies AG. ESSCIRC 2000
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Generating All
2-Transistor Circuits Leads to New Wide-Band CMOS LNAs, Bruccoleri F., University
of Twente. ESSCIRC 2000
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Using Capactive
Cross-Coupling Technique in RF Low Noise Amplifiers and Down-Conversion Mixer
Design, Zhuo W., Texas A&M University. ESSCIRC 2000 .
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A 1.5-V,
1.5-GHz CMOS Low Noise Amplifier, Derek K. Shaeffer and Thomas H. Lee,
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 5, MAY 1997.
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A Fully
Integrated 1.9-GHz CMOS Low-Noise Amplifier, Cheon Soo Kim,Min Park,
Chung-Hwan Kim, Yeong Cheol Hyeon, Hyun Kyu Yu, Kwyro Lee, and Kee Soo Nam,
IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 8, NO. 8, AUGUST 1999
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FULLY-INTEGRATED
DECT/BLUETOOTH MULTI-BAND LNA IN 0.18 mm CMOS , Vojkan Vidojkovic, Johan
van der Tang, Eric Hanssen, Arjan Leeuwenburgh and Arthur van Roermund.
- rf amplifiers
- emitter generation feed back amplifier
- feed back amplifier
- small signal amplifier
- buffer amplifier
- CDMA LNA Design
- class notes, sandiego.edu
- LNA design Mathcad routine
- CMOS gate noise,modeling for LNAs
- CMOS LNA design article
- LNA design tool for MDS from Artetronics
- LNA and PA application notes , maxim
- transceiver design class notes
Power amplifier design papers free download
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An Integrated
2GHz 500mW Bipolar Amplifier, Dr. S. Weber, G. Doing,ISSCC/RFIC 1998,
Denver.
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Modeling for
Si-Bipolar Power Amplifiers, Dr. S. Weber, AACD 1998, Kopenhagen.
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First
Integrated Bipolar RF PA Family for Cordless Telephones, Dr. Stephan
Weber, ESSCIRC 1999 Duisburg.
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Power
Controller for Dual Band TDMA Power Amplifiers, Dr. Stephan Weber,
RFIC/IMS 2001, Phoenix.
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PA
Design, Danilo Gerna, Alexandre Giry, CRAFT, EUROPEAN PROJECT N.25710,
September First 1999.
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MONOLITHIC
TRANSFORMER-COUPLED RF POWER AMPLIFIERS IN SI-BIPOLAR, Werner Simbuerger,
D. Kehrer, A. Heinz, H.D. Wohlmuth, M. Rest, K. Aufinger, A.L. Scholtz,
presentation at AACD 2001.
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MONOLITHIC
TRANSFORMER-COUPLED RF POWER AMPLIFIERS IN SI-BIPOLAR, Werner Simbuerger,
D. Kehrer, A. Heinz, H.D. Wohlmuth, M. Rest, K. Aufinger, A.L. Scholtz,
presentation at AACD 2001. Presentation slides.
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RF Power
Amplifier Design, Markus Mayer & Holger Arthaber, Department of
Electrical Measurements and Circuit Design, Vienna University of Technology,
June 11, 2001
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Report on HF
MOST model benchmarking through key blocks validation, the simulated
performance of a simple 900 MHz Power Amplifier is compared with its measured
performance,” R. van Dongen, European Project Project Nr. 25710 August 26,
1999.
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The PBL 403 09
DECT power amplifier chip,” in : Wireless Trench technology for portable
wireless applications, Ericsson Review No. 01, 2001 Ted Johansson.
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The Design Of A
1.9GHz 250mW CMOS Power Amplifier For DECT,” Master Thesis, UC Berkeley, R.
Sekhar Narayanaswami.
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A 2.4-GHz,
2.2-W, 2-V Fully-Integrated CMOS Circular-Geometry Active-Transformer Power
Amplifier, Ichiro Aoki, Scott Kee, David Rutledge, Ali Hajimiri, CICC,
May 6-9, 2001, San Diego, California.
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A MONOLITHIC
5.8 GHZ POWER AMPLIFIER IN A 25 GHZ FT SILICON BIPOLAR TECHNOLOGY, W.
Simbürger e.a., Infineon Technologies, Corporate Research, Otto-Hahn-Ring 6,
D-81730 Munich, Germany.
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Design of a
Dual-Band Wireless LAN SiGe-Bipolar, Power Amplifier, Winfried Bakalski,
Krzysztof Kitlinski, Günter Donig, Boris Kapfelsperger, Christian Kuehn,
Carsten Ahrens, Wilfried Österreicher and Wolfgang Auchter, Infineon
Technologies AG, Robert Weigel, Univ. of Erlangen; and Arpad L. Scholtz, Vienna
Univ. of Technology, September 2004 High Frequency Electronics.
- CMOS LNA design and
- noise anlysis of LNA
- class notes ualberta.ca
- CDMA LNA design, a philps application note
- LNA Cross modulation
- WCDMA LNA linearity
- noise notes Georgia Tech 4391 class
- LNA and PA design, eesof article
General RF Design
- class notes, ece.wpi.edu
- PA linearization
PA Design Articles
- CMOS Class E PA3
- PA design class
- Nonlinear Capacitance in Class E PAs
- DECT PA Thesis on power amplifier
- CMOS PA design 6
- microwave class ualberta.ca
- Linearized PA for EDGE
Overview of CMOS LNA
THE LNA is the block entrusted to amplify the weak
signal received by the antenna in a reception system. In
wireless systems with high requirements, the LNA design is
critical because it should provide enough gain to the low power
signals that arrive at the antenna, not degrade the signal-noise
ratio , and be capable to sustain large signals with low
distortion and low power dissipation. Additionally, since the
previous stage of the LNA is an antenna or a filter, a specific
input impedance (50 ohm) to guarantee the maximum power
transference is needed. In this way, the LNA design implicates
a commitment among enough gain, low noise figure, input
(and sometimes output) matching, high linearity, and low
power.
A clear strategy to LNA RF CMOS design that involves
the optimization of the noise and linearity performance with a
specified gain and power dissipation is not available in the
literature. In the last years, large number of LNA circuits
in RF CMOS has been presented, however, few accurate
methodologies have been proposed. Since the LNA dominates
the global noise figure of a receiver, almost all the methods are
based on the optimization of the noise performance with predefined
gain and power dissipation, meantime the other
parameters are adapted to the specifications using simulations
and interactive procedures. The linearity performance as a
direct objective of design is important for broadband LNAs
used in multi-standard systems and for applications
The noise performance of a LNA is directly related to the
input matching circuit. Different circuit topologies have been
proposed with the purpose to match the input for maximum
power transfer taking into account the trade-off of a reduced
noise contribution. The common source stage with inductive
degeneration similar to the topologies often used in
LNAs, showed the best noise performance in CMOS . However, other designers have tuned the input impedance
that minimizes the noise figure using the classic noise theory
developed by Rothe
Books on LNAs and PAs
1. RF Power Amplifiers, Mihai Albulet,
2. RF Circuit Design II: Active Circuits and Systems,
3. RF Power Amplifiers for Wireless Communications, Steve C. Cripps
4. Small Signal Microwave Amplifier Design, Theodore Grosch
5. RF CMOS Power Amplifiers, Hella, Kluwer
6. High Linearity RF Amplifier Design, Peter Kenington,Artech
7. Distortion in RF Power Amplifiers, Joel Vuolevi, Artech
8. Design of Linear RF Outphasing PAs, Zhang et al. Artech.
9. Power Amplifier Design, from Applied Microwave and Wireless
10. Small-Signal Amplifier Design, from Applied Microwave and Wireless
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